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TK1R4S04PB - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.1 mΩ (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK1R4S04PB 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC).

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Datasheet Details

Part number TK1R4S04PB
Manufacturer Toshiba
File Size 471.36 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK1R4S04PB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS-H) TK1R4S04PB 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.1 mΩ (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK1R4S04PB 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4.