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TK1R5R04PB - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.25 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK1R5R04PB D2PAK+ 1: Gate 2: Drain (Heatsink) 3: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-11 2020-06-24 Rev.6.0 TK1R5R04PB 4. Absolute Maximum Ratings (Note) (Ta = 25  unle.

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Datasheet Details

Part number TK1R5R04PB
Manufacturer Toshiba
File Size 551.52 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK1R5R04PB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS-H) TK1R5R04PB 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators • DC-DC Converters 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.25 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK1R5R04PB D2PAK+ 1: Gate 2: Drain (Heatsink) 3: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-11 2020-06-24 Rev.6.0 TK1R5R04PB 4.