TK200F04N1L - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TK200F04N1L
Manufacturer	Toshiba
File Size	327.16 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK200F04N1L Datasheet
Additional preview pages of the TK200F04N1L datasheet.

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.78 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK200F04N1L TO-220SM(W) 1: Gate 2: Drain (Heatsink) 3: Source ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-08 2020-06-24 Rev.8.0 TK200F04N1L 4. Absolute Maximum Ratings (Note) (Ta = 25 .

📁 Similar Datasheet

TK2019 - STEREO 20W (4OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
TK2050 - STEREO 50W (8OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
TK2051 - STEREO 50W (8ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
TK2070 - STEREO 70W (4Ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
TK20A - Current Transducer (Topstek)
TK20A60W - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK20A60W5 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK20C60W - Silicon N-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by Toshiba

Published: Jan 2, 2024 |