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TK20J50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK20J50D
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.22 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
2.0
1.0
15.9 MAX.
Unit: mm
Ф3.2 ± 0.2
4.5
20.0 ± 0.3
9.0
2.0
3.3 MAX.
20.5 ± 0.5
Absolute Maximum Ratings (Ta = 25°C)
2.0 ± 0.3
1.0
＋0.3 －0.25
Characteristics
Symbol
Rating
Unit
5.45 ± 0.2
5.45 ± 0.2
2.8 4.8 MAX.
1.8 MAX. ＋0.3
0.6 －0.
TK20J50D Datasheet
