TK20S04K3L - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20S04K3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source Start of commercial production 2011-04 1 2015-02-27 Rev.5.0 TK20S04K3L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit D.

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Published: Nov 3, 2013 |