TK22A10N1
TK22A10N1 is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) Low drain-source on-resistance: RDS(ON) = 11.5 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 m A)
3. Packaging and Internal Circuit
1: Gate 2: Drain 3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit)
(Note 1,2)
Drain current (DC)
(Tc = 25)
(Note 1)
Drain current (pulsed)
(t = 1 ms)
(Note 1)
Power dissipation
(Tc = 25)
Single-pulse avalanche energy
(Note 3)
48 m J
Avalanche current
Channel temperature
Tch...
