TK25E60X5 - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) Fast reverse recovery time: trr = 120 ns(typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.12 Ω(typ. ) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V(VDS = 10 V, ID = 1.2 mA) 3. Packaging and Internal Circuit TK25E60X5 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) P.

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Published: Nov 9, 2019 |