TK25N60X mosfet equivalent, silicon n-channel mosfet.
(1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) by used to Super Junction Structure : DTMOS
(2) High-speed switching properties with lower capacitance. (3) E.
* Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) by used to S.
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