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TK28V65W - Silicon N-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.099 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA) 3. Packaging and Internal Circuit TK28V65W DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise.

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Datasheet Details

Part number TK28V65W
Manufacturer Toshiba
File Size 296.82 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK28V65W Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (DTMOS) TK28V65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.099 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA) 3. Packaging and Internal Circuit TK28V65W DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 27.