TK290P60Y - Silicon N-Channel MOSFET

Name: TK290P60Y
SKU: TK290P60Y-1389594

Toshiba

The TK290P60Y by Toshiba is a Silicon N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	TK290P60Y
Manufacturer	Toshiba
File Size	451.30 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK290P60Y-Toshiba.pdf
Additional preview pages of the TK290P60Y datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.23 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Tc = 25 ) (Note 1) ID 11.

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Published: Jul 8, 2019 |