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TK2K2A60F - Silicon N-Channel MOSFET

Key Features

  • (1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 1.82 Ω (typ. ) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.35 mA) 3. Packaging and Internal Circuit TK2K2A60F 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-puls.

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Datasheet Details

Part number TK2K2A60F
Manufacturer Toshiba
File Size 461.93 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK2K2A60F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (π-MOS) TK2K2A60F 1. Applications • Switching Power Supplies 2. Features (1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 1.82 Ω (typ.) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.35 mA) 3. Packaging and Internal Circuit TK2K2A60F 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25 ) (t = 1.