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TK31V60X - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK31V60X
Manufacturer	Toshiba
File Size	241.54 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK31V60X-Toshiba.pdf

TK31V60X Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31V60X DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. 4. Absolute Maximum Ratings (Note) (.

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Published: Nov 9, 2019 |