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TK31Z60X - Silicon N-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31Z60X TO-247-4L(T) 1. Drain (Heatsink) 2. Source 1 3. Source 2 4. Gate Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pin. ©2016-2017 Toshiba Electroni.

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Datasheet Details

Part number TK31Z60X
Manufacturer Toshiba
File Size 281.16 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK31Z60X Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (DTMOS-H) TK31Z60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31Z60X TO-247-4L(T) 1. Drain (Heatsink) 2. Source 1 3. Source 2 4. Gate Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pin. ©2016-2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-11 2017-12-06 Rev.4.0 TK31Z60X 4.