Datasheet4U Logo Datasheet4U.com

TK31Z60X Datasheet - Toshiba

Silicon N-Channel MOSFET

TK31Z60X Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31Z60X TO-247-4L(T) 1. Drain

TK31Z60X Datasheet (281.16 KB)

Preview of TK31Z60X PDF

Datasheet Details

Part number:

TK31Z60X

Manufacturer:

Toshiba ↗

File Size:

281.16 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

TK31A60W Silicon N-Channel MOSFET (Toshiba)

TK31A60W N-Channel MOSFET (INCHANGE)

TK31E60W Silicon N-Channel MOSFET (Toshiba)

TK31E60W N-Channel MOSFET (INCHANGE)

TK31E60X Silicon N-Channel MOSFET (Toshiba)

TK31J60W Silicon N-Channel MOSFET (Toshiba)

TK31J60W N-Channel MOSFET (INCHANGE)

TK31J60W5 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TK31J60W5 N-Channel MOSFET (INCHANGE)

TK31N60W Silicon N-Channel MOSFET (Toshiba)

TAGS

TK31Z60X Silicon N-Channel MOSFET Toshiba

Image Gallery

TK31Z60X Datasheet Preview Page 2 TK31Z60X Datasheet Preview Page 3

TK31Z60X Distributor