TK39N60X

The TK39N60X is Silicon N-Channel MOSFET designed by Toshiba.

Product Overview

Toshiba

Part number	TK39N60X
Manufacturer	Toshiba
File Size	245.91 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK39N60X-Toshiba.pdf
Additional preview pages of the TK39N60X datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.9 mA) 3. Packaging and Internal Circuit TK39N60X 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drai.

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Published: Nov 9, 2019 |