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TK39N60X - Silicon N-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.9 mA) 3. Packaging and Internal Circuit TK39N60X 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drai.

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Datasheet Details

Part number TK39N60X
Manufacturer Toshiba
File Size 245.91 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK39N60X Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (DTMOS-H) TK39N60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.9 mA) 3. Packaging and Internal Circuit TK39N60X 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4.