Datasheet4U Logo Datasheet4U.com

TK3P50D - Silicon N-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 2.3 Ω (typ. ) (2) High forward transfer admittance: |Yfs| = 1.0 S (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK3P50D 1: Gate (G) 2: Drain (D)(HEAT SINK) 3: Source (S) DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-sour.

📥 Download Datasheet

Datasheet Details

Part number TK3P50D
Manufacturer Toshiba
File Size 229.47 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK3P50D Datasheet

Full PDF Text Transcription for TK3P50D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TK3P50D. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon N-Channel MOS (π-MOS) TK3P50D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.3 Ω (typ.) (2) H...

View more extracted text
tures (1) Low drain-source on-resistance: RDS(ON) = 2.3 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 1.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK3P50D 1: Gate (G) 2: Drain (D)(HEAT SINK) 3: Source (S) DPAK 4.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo TK3P50D N-Channel MOSFET INCHANGE

More Datasheets from Toshiba

Part Number Description
TK3P80E N-Channel MOSFET
TK31A60W Silicon N-Channel MOSFET
TK31E60W Silicon N-Channel MOSFET
TK31E60X Silicon N-Channel MOSFET
TK31J60W Silicon N-Channel MOSFET
TK31N60W Silicon N-Channel MOSFET
TK31N60X Silicon N-Channel MOSFET
TK31V60W5 Silicon N-Channel MOSFET
TK31V60X Silicon N-Channel MOSFET
TK31Z60X Silicon N-Channel MOSFET