Datasheet4U.com

TK3R1E04PL - Silicon N-channel MOSFET

Toshiba

📥 Download Datasheet

TK3R1E04PL Datasheet Preview — Preview of TK3R1E04PL PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TK3R1E04PL
Manufacturer	Toshiba
File Size	502.70 KB
Description	Silicon N-channel MOSFET
Datasheet	TK3R1E04PL-Toshiba.pdf

TK3R1E04PL Product details

Features

(1) High-speed switching (2) Small gate charge: QSW = 17.5 nC (typ. ) (3) Small output charge: Qoss = 42 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK3R1E04PL TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production.

📁 TK3R1E04PL Similar Datasheet

TK3R3A06PL - N-Channel MOSFET (INCHANGE)
TK30A06J3A - MOSFET (Toshiba Semiconductor)
TK30A06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30E06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30J25D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30S06K3L - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK31A60W - N-Channel MOSFET (INCHANGE)
TK31E60W - N-Channel MOSFET (INCHANGE)

Other Datasheets by Toshiba

TK3R1A04PL - Silicon N-channel MOSFET
TK3R1P04PL - Silicon N-Channel MOSFET
TK3R2A08QM - Silicon N-Channel MOSFET
TK3R2A10PL - Silicon N-channel MOSFET
TK3R2E06PL - Silicon N-Channel MOSFET
TK3R3E03GL - Silicon N-Channel MOSFET

Published: Aug 7, 2019 |