Datasheet4U Logo Datasheet4U.com

TK3R2A08QM - Silicon N-Channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 31 nC (typ. ) (3) Small output charge: Qoss = 119 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.3 mA) 3. Packaging and Internal Circuit TK3R2A08QM TO-220SIS 1: Gate 2: Drain 3: Source ©2020-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-01.

📥 Download Datasheet

Datasheet Details

Part number TK3R2A08QM
Manufacturer Toshiba
File Size 486.78 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK3R2A08QM Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-channel MOS (U-MOS�-H) TK3R2A08QM 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 31 nC (typ.) (3) Small output charge: Qoss = 119 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.3 mA) 3. Packaging and Internal Circuit TK3R2A08QM TO-220SIS 1: Gate 2: Drain 3: Source ©2020-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-01 2022-12-19 Rev.2.0 TK3R2A08QM 4.