TK3R3E03GL - Silicon N-Channel MOSFET

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Toshiba

Part number	TK3R3E03GL
Manufacturer	Toshiba
File Size	432.53 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK3R3E03GL Datasheet
Additional preview pages of the TK3R3E03GL datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (3) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID =0.5 mA) 3. Packaging and Internal Circuit TK3R3E03GL 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V Drain current (DC) (Silic.

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Published: Jan 2, 2024 |