* (1) High-speed switching (2) Small gate charge: QSW = 31 nC (typ.) (3) Small output charge: Qoss = 119 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID
TK3R3E08QM Datasheet (494.87 KB)
TK3R3E08QM
494.87 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS -H) TK3R3E08QM 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulat.
📁 Related Datasheet
TK3R3E03GL Silicon N-Channel MOSFET (Toshiba)
TK3R3E03GL N-Channel MOSFET (INCHANGE)
TK3R3A06PL N-Channel MOSFET (INCHANGE)
TK3R3A06PL Silicon N-Channel MOSFET (Toshiba)
TK3R1A04PL Silicon N-channel MOSFET (Toshiba)
TK3R1A04PL N-Channel MOSFET (INCHANGE)
TK3R1E04PL Silicon N-channel MOSFET (Toshiba)
TK3R1E04PL N-Channel MOSFET (INCHANGE)
TK3R1P04PL Silicon N-Channel MOSFET (Toshiba)
TK3R1P04PL N-Channel MOSFET (INCHANGE)
