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TK3R3E08QM - Silicon N-Channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 31 nC (typ. ) (3) Small output charge: Qoss = 119 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.3 mA) 3. Packaging and Internal Circuit TK3R3E08QM TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2020-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production.

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Datasheet Details

Part number TK3R3E08QM
Manufacturer Toshiba
File Size 494.87 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK3R3E08QM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS�-H) TK3R3E08QM 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 31 nC (typ.) (3) Small output charge: Qoss = 119 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.3 mA) 3. Packaging and Internal Circuit TK3R3E08QM TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2020-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-01 2021-02-01 Rev.2.0 TK3R3E08QM 4.