TK4A80E mosfet equivalent, n-channel mosfet.
(1) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10.
* Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (2) Low leaka.
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