TK4K1A60F - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TK4K1A60F
Manufacturer	Toshiba
File Size	457.56 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK4K1A60F Datasheet
Additional preview pages of the TK4K1A60F datasheet.

(1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 3.38 Ω (typ. ) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.19 mA) 3. Packaging and Internal Circuit TK4K1A60F 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-puls.

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Published: Jan 2, 2024 |