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TK4R3E06PL - Silicon N-channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 15.1 nC (typ. ) (3) Small output charge: Qoss = 39 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK4R3E06PL TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production.

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Datasheet Details

Part number TK4R3E06PL
Manufacturer Toshiba
File Size 497.98 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TK4R3E06PL Datasheet

Full PDF Text Transcription for TK4R3E06PL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TK4R3E06PL. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon N-channel MOS (U-MOS�-H) TK4R3E06PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High...

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rs • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 15.1 nC (typ.) (3) Small output charge: Qoss = 39 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK4R3E06PL TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-10 2021-01-20 Rev.3.0 TK4R3E06PL 4.

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