TK5A50D5 - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TK5A50D5
Manufacturer	Toshiba
File Size	407.26 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK5A50D5 Datasheet
Additional preview pages of the TK5A50D5 datasheet.

(1) Fast reverse recovery time: trrf = 40 ns (typ. ), trr = 90 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 1.62 Ω (typ. ) (3) High forward transfer admittance: |Yfs| = 3.0 S (typ. ) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) (5) Enhancement mode: Vth = 2.5 to 4.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK5A50D5 TO-220SIS 1: Gate (G) 2: Drain (D) 3: Source (S) ©2016-2018 Toshiba Electronic Devices & Storage Corporation 1 2018-06-19 Rev.1.0 TK5A50.

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Published: Jan 2, 2024 |