900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

TK5P50D Datasheet

Field Effect Transistor

No Preview Available !

TK5P50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK5P50D
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.)
High forward transfer admittance: Yfs= 3.0 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
6.6 ± 0.2
5.34 ± 0.13
0.58MAX
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note
1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
ymbol
VDSS
VGSS
ID
IDP
PD
EAS 128
IAR 5
EAR 8
Tch 150
Tstg
Rating
500 V
±30 V
5
20
80 W
55 to 150
Unit
A
mJ
A
mJ
°C
°C
1.14MAX
0.76 ± 0.12
2.29
123
1. GATE
2. DRAIN
HEAT SINK
3. SO URCE
JEDEC
JEITA
TOSHIBA
2-7K1A
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics S
Thermal resistance, channel to case
Thermal resistance, channel to ambient
ymbol
Rth (ch-c)
Rth (ch-a)
Max Unit
1.56
125
°C/W
°C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.67 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
Start of commercial production
2009-12
1 2013-11-01
http://www.Datasheet4U.com


Toshiba Electronic Components Datasheet

TK5P50D Datasheet

Field Effect Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)
TK5P50D
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
tr
ton
tf
toff
VGS = ±30 V, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
10 V
VGS
0V
50 Ω
ID = 2.5 A VOUT
RL =
80 Ω
VDD 200 V
Duty 1%, tw = 10 μs
⎯⎯
⎯⎯
500
2.4
1.3
0.8 3.0
490
3
55
18
40
8
55
±1
10
4.4
1.5
μA
μA
V
V
Ω
S
pF
ns
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 5 A
Qgd
11
5
6
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics S
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
ymbol
Test Condition
IDR
IDRP
VDSF
trr
Qrr
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯⎯
5
⎯ ⎯ 20
⎯ ⎯ −1.7
1000
5.0
A
A
V
ns
μC
Marking (Note 4)
TK5P50D
Part No. (or abbreviation code)
Lot No.
Note 4: * Weekly code: (Four digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last 2digits of the calendar year)
2
2013-11-01


Part Number TK5P50D
Description Field Effect Transistor
Maker Toshiba
Total Page 6 Pages
PDF Download

TK5P50D Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 TK5P50D Field Effect Transistor
Toshiba





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy