TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
• Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
6.6 ± 0.2
5.34 ± 0.13
Absolute Maximum Ratings (Ta = 25°C)
DC (Note 1)
Pulse (t = 1 ms)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Repetitive avalanche energy (Note 3)
Storage temperature range
−55 to 150
0.76 ± 0.12
3. SO URCE
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.67 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Start of commercial production