• Part: TK5R1P08QM
  • Description: Silicon N-channel MOSFET
  • Manufacturer: Toshiba
  • Size: 495.32 KB
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Datasheet Summary

MOSFETs Silicon N-channel MOS (U-MOS- -H) 1. Applications - High-Efficiency DC-DC Converters - Switching Voltage Regulators - Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 17 nC (typ.) (3) Small output charge: Qoss = 66 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 4.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.7 mA) 3. Packaging and Internal Circuit DPAK 1: Gate 2: Drain (heatsink) 3: Source ©2020-2021 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2021-01 2021-01-19...