* (1) High-speed switching (2) Small gate charge: QSW = 17 nC (typ.) (3) Small output charge: Qoss = 66 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 4.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID =
TK5R3E08QM Datasheet (501.80 KB)
TK5R3E08QM
501.80 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS -H) TK5R3E08QM 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulat.
📁 Related Datasheet
TK5R3A06PL Silicon N-Channel MOSFET (Toshiba)
TK5R3A06PL N-Channel MOSFET (INCHANGE)
TK5R0A15Q5 Silicon N-channel MOSFET (Toshiba)
TK5R1A08QM Silicon N-Channel MOSFET (Toshiba)
TK5R1E06PL Silicon N-Channel MOSFET (Toshiba)
TK5R1E06PL N-Channel MOSFET (INCHANGE)
TK5R1P08QM Silicon N-channel MOSFET (Toshiba)
TK50A04K3 MOSFETs (Toshiba Semiconductor)
TK50A04K3 N-Channel MOSFET (INCHANGE)
TK50F15J1 MOSFETs (Toshiba Semiconductor)
