Datasheet4U Logo Datasheet4U.com

TK60S10N1L - Silicon N-channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.14 mΩ (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK60S10N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-12 2020-06-24 Rev.4.0 TK60S10N1L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise s.

📥 Download Datasheet

Datasheet Details

Part number TK60S10N1L
Manufacturer Toshiba
File Size 646.77 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TK60S10N1L Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-channel MOS (U-MOS-H) TK60S10N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators • DC-DC Converters 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.14 mΩ (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK60S10N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-12 2020-06-24 Rev.4.0 TK60S10N1L 4.