TK62N60X Datasheet | Toshiba

Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 3.1 m A) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Mounting torque (Tc = 25) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg TOR 600 ±30 61.8 247 400 698 15.5 61.8 247 150 -55 to 150 0.8 V A W m J A  Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of mercial production 2013-09 1 2014-02-28 Rev.3.0 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 5.08 m H, RG = 25 Ω, IAR = 15.5 A Symbol Rth(ch-c) Rth(ch-a) Max 0.313 50 Unit /W Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2014-02-28...