TK65S04N1L - Silicon N-channel MOSFET

Product Overview

Toshiba

Part number	TK65S04N1L
Manufacturer	Toshiba
File Size	319.91 KB
Description	Silicon N-channel MOSFET
Datasheet	TK65S04N1L Datasheet
Additional preview pages of the TK65S04N1L datasheet.

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK65S04N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-04 2020-06-24 Rev.8.0 TK65S04N1L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise spe.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Jan 3, 2024 |