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TK65S04N1L - Silicon N-channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK65S04N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-04 2020-06-24 Rev.8.0 TK65S04N1L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise spe.

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Datasheet Details

Part number TK65S04N1L
Manufacturer Toshiba
File Size 319.91 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TK65S04N1L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS-H) TK65S04N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK65S04N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-04 2020-06-24 Rev.8.0 TK65S04N1L 4.