TK6P53D
TK6P53D is N-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
Switching Regulator Applications
Unit: mm
1.08±0.2
- Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.)
- High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 525 V)
- Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 m A)
6.6 ± 0.2 5.34 ± 0.13
0.58MAX
6.1 ± 0.12 +0.4
- 0.6
1.01MAX
Absolute Maximum Ratings (Ta = 25°C)
2.3 ± 0.1 0.07 ± 0.07
+0.25 1.52
- 0.12
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VGSS
IAR EAR Tch...
