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TK6P60W - Silicon N-channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.31 mA) 3. Packaging and Internal Circuit TK6P60W DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2012-09 1 2014-09-17 Rev.4.0 TK6P60W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source volta.

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Datasheet Details

Part number TK6P60W
Manufacturer Toshiba
File Size 240.19 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TK6P60W Datasheet

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MOSFETs Silicon N-Channel MOS (DTMOS) TK6P60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.31 mA) 3. Packaging and Internal Circuit TK6P60W DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2012-09 1 2014-09-17 Rev.4.0 TK6P60W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 6.2 A Drain current (pulsed) (Note 1) IDP 24.