TK6R8A08QM - Silicon N-channel MOSFET

Product Overview

Toshiba

Part number	TK6R8A08QM
Manufacturer	Toshiba
File Size	488.32 KB
Description	Silicon N-channel MOSFET
Datasheet	TK6R8A08QM Datasheet
Additional preview pages of the TK6R8A08QM datasheet.

(1) High-speed switching (2) Small gate charge: QSW = 13 nC (typ. ) (3) Small output charge: Qoss = 46 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 5.3 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK6R8A08QM TO-220SIS 1: Gate 2: Drain 3: Source ©2020-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-01 2.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Jan 3, 2024 |