TK70X04K3Z - Silicon N-channel MOSFET

Product Overview

Toshiba

Part number	TK70X04K3Z
Manufacturer	Toshiba
File Size	249.74 KB
Description	Silicon N-channel MOSFET
Datasheet	TK70X04K3Z Datasheet
Additional preview pages of the TK70X04K3Z datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK70X04K3Z 1: Gate :G 2: N. C. 3: Source :S 4: Drain :D TFP 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1).

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Jan 3, 2024 |