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TK70X04K3Z - Silicon N-channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK70X04K3Z 1: Gate :G 2: N. C. 3: Source :S 4: Drain :D TFP 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1).

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Datasheet Details

Part number TK70X04K3Z
Manufacturer Toshiba
File Size 249.74 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TK70X04K3Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS ) TK70X04K3Z 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK70X04K3Z 1: Gate :G 2: N.C. 3: Source :S 4: Drain :D TFP 4.