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TK7Q65W - Silicon N-channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.66 Ω(typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.25 mA) 3. Packaging and Internal Circuit TK7Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note.

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Datasheet Details

Part number TK7Q65W
Manufacturer Toshiba
File Size 385.13 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TK7Q65W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (DTMOS) TK7Q65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.66 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.25 mA) 3. Packaging and Internal Circuit TK7Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 6.8 A Drain current (pulsed) (Note 1) IDP 27.2 Power dissipation (Tc = 25 ) PD 60 W Single-pulse avalanche energy (Note 2) EAS 90 mJ Avalanche current IAR 1.