* (1) High-speed switching (2) Small gate charge: QSW = 9.7 nC (typ.) (3) Small output charge: Qoss = 23 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 6.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID
TK8R2E06PL Datasheet (575.25 KB)
TK8R2E06PL
575.25 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS -H) TK8R2E06PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulat.
📁 Related Datasheet
TK8R2E06PL N-Channel MOSFET (INCHANGE)
TK8R2A06PL Silicon N-channel MOSFET (Toshiba)
TK8R2A06PL N-Channel MOSFET (INCHANGE)
TK8011 1 key touch detector (Tenx)
TK8012 2 key touch detector (Tenx)
TK8021 1 key touch detector (Tenx)
TK8022 2 key touch detector (Tenx)
TK8023 3 key touch detector (Tenx)
TK80A04K3L MOSFETs (Toshiba Semiconductor)
TK80A04K3L N-Channel MOSFET (INCHANGE)
