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TK9Q65W Datasheet - Toshiba

Silicon N-channel MOSFET

TK9Q65W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.35 mA) 3. Packaging and Internal Circuit TK9Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absol

TK9Q65W Datasheet (386.70 KB)

Preview of TK9Q65W PDF

Datasheet Details

Part number:

TK9Q65W

Manufacturer:

Toshiba ↗

File Size:

386.70 KB

Description:

Silicon n-channel mosfet.

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TK9Q65W Silicon N-channel MOSFET Toshiba

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