Datasheet4U Logo Datasheet4U.com

TK9Q65W - Silicon N-channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω(typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.35 mA) 3. Packaging and Internal Circuit TK9Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note.

📥 Download Datasheet

Datasheet Details

Part number TK9Q65W
Manufacturer Toshiba
File Size 386.70 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TK9Q65W Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK9Q65W N-Channel MOSFET INCHANGE
TK920M3A InGaAs Tyntek
TK920M3B InGaAs Tyntek
TK920M3C InGaAs Tyntek
TK95 INSULATED LEAD INTERCHANGEABLE THERMISTOR NTC

Other Datasheets by Toshiba

Part Number Description
TK90S06N1L N-channel MOSFET
TK9A65W N-Channel MOSFET
TK9J90E N-Channel MOSFET
TK9P65W N-Channel MOSFET
TK9R6E15Q5 Silicon N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-Channel MOS (DTMOS) TK9Q65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.35 mA) 3. Packaging and Internal Circuit TK9Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 9.3 A Drain current (pulsed) (Note 1) IDP 37.2 Power dissipation (Tc = 25 ) PD 80 W Single-pulse avalanche energy (Note 2) EAS 116 mJ Avalanche current IAR 2.