TLP109-IGM Datasheet | Toshiba

Features (1) Isolation voltage: 3750 Vrms (min) (2) mon-mode transient immunity: 10 k V/µs (min) @VCM = 1500 Vp-p (3) Propagation delay time tp HL/tp LH = 0.1 µs (min) = 0.8 µs (max) @ IF = 10 m A, VCC = 15 V, RL = 20 kΩ, Ta = 25  (4) Pulse width distortion: 0.7 µs (max) (|tp HL-tp LH|) (5) TTL patible (6) Safety standards UL-recognized: UL 1577, File No.E67349 c UL-recognized: CSA ponent Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4). ©2017-2019 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2008-07 2019-09-20 Rev.2.0 4. Packaging and Pin Assignment 11-4L1S 5. Internal Circuit TLP109(IGM) 1: Anode 3: Cathode 4: GND 5: VO (Output) 6: VCC 6. Principle of Operation 6.1. Mechanical Parameters Characteristics Creepage distances Clearance distances Internal isolation thickness Min Unit 5.0 mm ©2017-2019 Toshiba Electronic Devices & Storage Corporation 2019-09-20 Rev.2.0 TLP109(IGM) 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit LED Input forward current 20 m A Input forward current derating (Ta ≥ 95...