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Toshiba Electronic Components Datasheet

TLP250F-INV Datasheet

Photocoupler

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TOSHIBA Photocoupler IRED & Photo-IC
TLP250F(INV)
TLP250F(INV)
Transistor Inverter
Inverters for Air Conditioner
IGBT Gate Drive
Power MOS FET Gate Drive
The TOSHIBA TLP250F(INV) consists of an infrared emitting diode and a
integrated photodetector.
This unit is 8-lead DIP.
TLP250F(INV) is suitable for gate driving circuit of IGBT or power MOS FET.
Input Threshold Current : IF=5mA(max)
Supply Current
: 11mA(max)
Supply Voltage
: 10 to 35V
Output Current
: ±1.5A(max)
Switching Time(tpLH/tpHL) : 0.5μs(max)
Isolation Voltage
: 2500Vrms(min)
UL-recognized
: UL 1577,File No.E67349
cUL-recognized
: CSA Component Acceptance Service
No.5A File No.E67349
VDE-Approved
: EN 60747-5-5 (Note 1)
Unit : mm
TOSHIBA
1110C402S
Weight: 0.54 g (typ.)
Note 1:When a VDE approved type is needed, please designate the Option(D4).
Creepage Distance
Clearance
Truth Table
: 8.0mm(min)
: 8.0mm(min)
Pin Configuration (top view)
Input LED
ON
OFF
Tr 1
ON
OFF
Tr 2
OFF
ON
11::NN..CC. .
22::AANNOODDEE
33::CCAATTHHOODEDE
445:::NNG.N.CCD. .
56::GVON(ODUTPUT)
67::VVOO (OUTPUT)
78::VVCOC
8: VCC
S che matic
IIFF
2+
VF
3-
ICC
8 VCC
Tr1
VO
IO 6 VO
Tr2)
Note: A 0.1μF bypass capacitor must be
5 GND
Connected between pin 8 and 5(See Note 5).
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1998-07
2019-06-17


Toshiba Electronic Components Datasheet

TLP250F-INV Datasheet

Photocoupler

No Preview Available !

Absolute Maximum Ratings (Ta=25°C)
TLP250F(INV)
Characteristics
Symbol
Rating
Unit
Forward Current
Forward Current Derating (Ta70°C)
Peak Transient Forward Current
Reverse Voltage
Diode power dissipation
Diode power dissipation derating (Ta70 °C)
Junction Temperature
(Note 1)
IF
IF /Ta
IFPT
VR
PD
PD/°C
Tj
20
0.36
1
5
40
-0.72
125
mA
mA /°C
A
V
mW
mW/°C
°C
“H” Peak
Output Current
“L” Peak
Output Current
PW 2.5μs , f15 kHz
1.5
PW1.0μs , f15 kHz
IOPH
A
2.0
(Note 2)
PW2.5μs , f15 kHz
+1.5
PW 1.0μs , f15 kHz
IOPL
A
+2.0
Output Voltage
(Ta70°C)
35
(Ta85°C)
VO
24
V
Supply Voltage
(Ta70°C)
35
(Ta85°C)
VCC
24
V
Output Voltage Derating (Ta70°C)
VO /Ta 0.73
V /°C
Supply Voltage Derating (Ta70°C)
VCC /Ta 0.73
V /°C
Output Power dissipation
PO
800
mW
Output Power dissipation derating (Ta 70°C )
ΔPO / °C
-14.5
mW/°C
Junction Temperature
Tj
125
°C
Operating Frequency
(Note 3)
f
25
kHz
Operating Temperature Range
Topr
20 to 85
°C
Storage Temperature Range
Tstg
55 to 125 °C
Lead Soldering Temperature(10 s)
Tsol
260
°C
Isolation Voltage (AC,60 s., R.H. 60 %)
(Note 4) BVS
2500
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) : Pulse width PW1 μs,300 pps
(Note 2) : Exporenential Waveform
(Note 3) : Exporenential Waveform IOPH≤−1.0 A (2.5 μs) , IOPL+1.0 A (2.5 μs)
(Note 4) : Device considerd a two terminal device : pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together.
(Note 5) : A ceramic capacitor(0.1 μF) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear
amplifier.Failure to provide the bypassing may impair the switching proparty.The total lead length between capacitor and
coupler should not exceed 1cm.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-17


Part Number TLP250F-INV
Description Photocoupler
Maker Toshiba
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TLP250F-INV Datasheet PDF






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