Absolute Maximum Ratings (Ta = 25°C)
TLP351F
Characteristics
Symbol
Rating
Unit
Forward current
Forward current derating (Ta ≥ 85°C)
IF
∆IF/∆Ta
20
−0.54
mA
mA/°C
Peak transient forward current
(Note 1)
IFP
1
A
Reverse voltage
Power Dissipation
VR
5
V
PD
40
mW
Power Dissipation Derating (Ta ≥ 85°C)
∆PD /°C
-1.0
mW/°C
Junction temperature
Tj
125
°C
“H” peak output current
“L” peak output current
Output voltage
(Note 2)
(Note 2)
IOPH
IOPL
VO
−0.6
A
0.6
A
35
V
Supply voltage
Output Power Dissipation
Output Power Dissipation Derating (Ta ≥ 85°C)
Junction temperature
VCC
PO
∆PO /°C
Tj
35
V
260
mW
-6.5
mW/°C
125
°C
Operating frequency
(Note 3)
f
25
kHz
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
(Note 4)
Tstg
Topr
Tsol
−55 to 125
°C
−40 to 100
°C
260
°C
Isolation voltage (AC, 60 s, R.H. ≤ 60 %)
(Note 5)
BVS
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width PW ≤ 1 μs, 300 pps
Note 2: Exponential waveform pulse width PW ≤ 10 μs, f ≤ 15 kHz
Note 3: Exponential waveform IOPH ≤ −0.4 A (≤ 2.0 μs), IOPL ≤ +0.4 A (≤ 2.0 μs), Ta = 100 °C
Note 4: It is 2 mm or more from a lead root.
Note 5: Device considered a two terminal device: pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted
together.
Recommended Operating Conditions
Characteristics
Symbol
Min Typ. Max Unit
Input current, ON
(Note 7)
IF (ON)
7.5
―
10
mA
Input voltage, OFF
VF (OFF)
0
―
0.8
V
Supply voltage
VCC
10
―
30
V
Peak output current
IOPH/IOPL
―
― ±0.2
A
Operating temperature
Topr
−40
―
100
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product,
please confirm specified characteristics shown in this document.
Note 7: Input signal rise time (fall time) < 0.5 μs
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-24
