Absolute Maximum Ratings (Ta = 25°C)
TLP666LF(S)
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating (Ta ≥ 53°C)
Peak forward current (100 μs pulse, 100 pps)
Reverse voltage
Diode power dissipation
Diode power dissipation derating (Ta ≥ 53°C)
Junction temperature
Off-state output terminal voltage
On-state RMS current
On-state current derating (Ta ≥ 25°C)
Peak on-state current (100 μs pulse, 120 pps)
Peak nonrepetitive surge current (Pw=10 ms)
Output power dissipation
Output power dissipation derating (Ta ≥ 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC,60 s, R.H. ≤ 60 %)
Ta=25°C
Ta=70°C
(Note 1)
IF
∆IF /°C
IFP
VR
PD
△PD /°C
Tj
VDRM
IT(RMS)
ΔIT / °C
ITP
ITSM
PO
ΔPO / °C
Tj
Tstg
Topr
Tsol
BVS
50
mA
−0.7
mA /°C
1
A
5
V
100
mW
-1.4
mW/°C
125
°C
800
V
100
mA
50
−1.1
mA /°C
2
A
1.2
A
300
mW
−3.0 mW / °C
115
°C
−55 to 125 °C
−40 to 100 °C
260
°C
5000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins1, 2 and 3 shorted together and pins 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min Typ. Max Unit
Supply voltage
VAC
—
—
240
Vac
Forward current
IF
15
20
25
mA
Peak on-state current
ITP
—
—
1
A
Operating temperature
Topr
−25 —
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product,
please confirm specified characteristics shown in this document.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-05-20
