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Toshiba Electronic Components Datasheet

TLP751F Datasheet

Photocoupler

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TOSHIBA Photocoupler IRED + Photo IC
TLP751F
TLP751F
Digital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Analog Signal Isolation
The TOSHIBA TLP751F consists of a highoutput infrared emitting diode
and a high speed detector of one chip photo diode
transistor. This unit is 8lead DIP.
TLP751F has internal base connection. This base pin should be used for
analog application or enable operation. If base pin is open, output signal
will be noisy by environmental condition. For this case, TLP750F is
suitable.
Unit: mm
Switching speed: tpHL = 0.2μs (typ.)
tpLH = 1.0μs (typ.) (RL=1.9kΩ)
TTL compatible
Isolation voltage: 5000Vrms (min)
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
VDE-approved: EN 60747-5-5 (Note 1)
TOSHIBA
1110C402S
Weight: 0.54 g (typ.)
Pin Configuration (top view)
Note 1 :When a VDE approved type is needed,
please designate the Option(D4).
Creepage distance: 8.0mm (min)
Clearance: 8.0mm (min)
Insulation thickness: 0.4mm (min)
Schematic
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1987-09
2019-06-10


Toshiba Electronic Components Datasheet

TLP751F Datasheet

Photocoupler

No Preview Available !

Absolute Maximum Ratings (Ta = 25°C)
TLP751F
Characteristic
Symbol
Rating
Unit
Forward current
Pulse forward current
Peak transient forward current
Reverse voltage
Diode power dissipation
Output current
Peak output current
Output voltage
Supply voltage
Base current
Output power dissipation
Emitterbase reverse voltage
Operating temperature range
Storage temperature range
Lead solder temperature(10 s)
Isolation voltage (AC, 60 s, R.H.60 %)
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
IF
IFP
IFPT
VR
PD
IO
IOP
VO
VCC
IB
PO
VEB
Topr
Tstg
Tsol
BVS
25
50
1
5
45
8
16
0.5 to 15
0.5 to 15
5
100
5
55 to 100
55 to 125
260
5000
mA
mA
A
V
mW
mA
mA
V
V
mA
mW
V
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Derate 0.8 mA above 70 °C
(Note 2) 50 % duty cycle, 1 ms pulse width.
Derate 1.6 mA / °C above 70 °C
(Note 3) Pulse width 1 μs, 300 pps.
(Note 4) Derate 0.9 mW / °C above 70 °C
(Note 5) Derate 2 mW / °C above 70 °C
(Note 6) Soldering portion of lead: up to 2mm from the body of the device.
(Note 7) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted
together.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-10


Part Number TLP751F
Description Photocoupler
Maker Toshiba
PDF Download

TLP751F Datasheet PDF






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