Absolute Maximum Ratings (Ta = 25°C)
TLP763JF
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating (Ta ≥ 53°C)
Peak forward current (100 μs pulse, 100 pps)
Reverse voltage
Diode power dissipation
Diode power dissipation derating (Ta ≥ 53°C)
Junction temperature
Off−state output terminal voltage
On−state RMS current
Ta = 25°C
Ta = 70°C
On−state current derating (Ta ≥ 25°C)
Peak on−state current (100μs pulse, 120pps)
Peak non-repetitive surge current
(PW = 10 ms)
Output power dissipation
Output power dissipation derating (Ta ≥ 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 60 s, R.H.≤ 60 %)
IF
ΔIF/°C
IFP
VR
PD
△PD /°C
Tj
VDRM
IT(RMS)
ΔIT/°C
ITP
ITSM
PO
ΔPO / °C
Tj
Tstg
Topr
Tsol
BVS
50
−0.7
1
5
100
-1.4
125
600
100
50
−1.1
2
1.2
300
−3.0
115
−55 to 125
−40 to 100
260
4000
mA
mA/°C
A
V
mW
mW/°C
°C
V
mA
mA/°C
A
A
mW
mW / °C
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
Recommended Operating Conditions
Characteristic
Symbol
Min Typ. Max Unit
Supply voltage
Forward current
Peak on−state current
Operating temperature
VAC
―
―
240 Vac
IF
15
20
25
mA
ITP
―
―
1
A
Topr
−25
―
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-10
