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TOSHIBA Transistor Silicon PNP Epitaxial Type
TMBT3906
Audio Frequency General Purpose Amplifier Applications
TMBT3906
High voltage and high current : VCEO = −50 V, IC = −200 mA (max)
Complementary to TMBT3904
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
Symbol
Rating
Unit
VCBO
−50
V
VCEO
−50
V
VEBO
−5
V
IC
−200
mA
IB
−30
mA
PC (Note 1)
320
mW
PC (Note 2)
1000
mW
Tj
150
°C
Tstg
−55 to 150
°C
SOT23
1. Base 2. Emitter 3. Collector
Note: Using continuously under heavy loads (e.g.
TMBT3906 Datasheet
