TOSHIBA Transistor Silicon PNP Epitaxial Type
Audio Frequency General Purpose Amplifier Applications
High voltage and high current
: VCEO = −50 V, IC = −200 mA (max)
Complementary to TMBT3904
Absolute Maximum Ratings (Ta = 25°C)
Collector power dissipation
Storage temperature range
PC (Note 1)
PC (Note 2)
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4mm x 25.4mm x 1.6mm, Cu Pad: 0.42mm2 x 3)
Note 2: Mounted on an FR4 board.
(25.4mm x 25.4mm x 1.6mm, Cu Pad: 645mm2)
Toshiba Electronic Devices & Storage Corporation
Start of commercial production