900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

TMBT3906 Datasheet

PNP Transistor

No Preview Available !

TOSHIBA Transistor Silicon PNP Epitaxial Type
TMBT3906
Audio Frequency General Purpose Amplifier Applications
TMBT3906
High voltage and high current
: VCEO = 50 V, IC = 200 mA (max)
Complementary to TMBT3904
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
200
mA
IB
30
mA
PC (Note 1)
320
mW
PC (Note 2)
1000
mW
Tj
150
°C
Tstg
55 to 150
°C
SOT23
1. Base
2. Emitter
3. Collector
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4mm x 25.4mm x 1.6mm, Cu Pad: 0.42mm2 x 3)
Note 2: Mounted on an FR4 board.
(25.4mm x 25.4mm x 1.6mm, Cu Pad: 645mm2)
Marking
SW
© 2015-2018
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2015-01
2018-05-17


Toshiba Electronic Components Datasheet

TMBT3906 Datasheet

PNP Transistor

No Preview Available !

TMBT3906
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
delay time
Switching times
rise time
storage time
fall time
Symbol
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
fT
Cob
NF
Test Condition
VCB = −50 V, IE = 0 mA
VEB = −5 V, IC = 0 mA
VCE = −1 V, IC = −0.1 mA
VCE = −1 V, IC = −1 mA
VCE = −1 V, IC = −10 mA
VCE = −1 V, IC = −50 mA
VCE = −1 V, IC = −100 mA
IC = −10 mA, IB = −1 mA
IC = −50 mA, IB = −5 mA
IC = −10 mA, IB = −1 mA
IC = −50 mA, IB = −5 mA
VCE = −20 V, IC = −10 mA
VCB = −10 V, IE = 0 mA, f = 1 MHz
VCE = −5 V, IC = −0.1 mA,
f = 1 kHz, Rg = 1 kΩ,
Min Typ. Max Unit
― −0.1 μA
― −0.1 μA
60
80
100
300
60 ― ―
30 ― ―
0.25
0.40
V
― ― 0.85
V
― ― 0.95
250
4
MHz
7
pF
4
dB
td
OUTPUT
35
INPUT 2.5 kΩ
tr
0
-5 V
― ― 35
VCC
ns
ts
500 μs
VBB
= -3 V
200
= 1.9 V
tf
IC = -10mA, IB1 = -IB2 = -1mA
― ― 50
© 2015-2018
2
Toshiba Electronic Devices & Storage Corporation
2018-05-17



Part Number TMBT3906
Description PNP Transistor
Maker Toshiba
Total Page 3 Pages
PDF Download

TMBT3906 Datasheet PDF





Similar Datasheet

1 TMBT3906 PNP Transistor
Toshiba





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy