This datasheet PDF includes multiple part numbers: TMM2018AD-25, TMM2018AD.
Please refer to the document for exact specifications by model.
Additional preview pages of the TMM2018AD-25 datasheet.
Product details
Features
with a maximum access time of 25ns/35ns/45ns and maximum operating current of 150mA/135mA/135mA. When ~ goes high, the device is deselected and placed in a low power standby mode in which maximum standby current is 20mA. Thus the TMM2018AD is most suitable for use in cache memory and high speed storage. The ~12018AD is offered in a 24 pin standard cerdip package with 0.3 inch width for high density assembly. The T}~12018AD is fabricated with ion implanted N channel silicon gate MOS technology fo.
📁 Similar Datasheet
TMM2063AP-10 - 65536 BITS HIGH SPEED AND LOW POWER STATIC RAMDOM ACCESS MEMORY(Toshiba Semiconductor)
TMM2063AP-12 - 65536 BITS HIGH SPEED AND LOW POWER STATIC RAMDOM ACCESS MEMORY(Toshiba Semiconductor)
TMM2063AP-70 - 65536 BITS HIGH SPEED AND LOW POWER STATIC RAMDOM ACCESS MEMORY(Toshiba Semiconductor)
TMM2064P - 8K x 8-Bit Static RAM(Toshiba Semiconductor)
TMM2064P-10 - 8K x 8-Bit Static RAM(Toshiba Semiconductor)
TMM2064P-12 - 8K x 8-Bit Static RAM(Toshiba Semiconductor)
TMM2064P-15 - 8K x 8-Bit Static RAM(Toshiba Semiconductor)