* with a maximum access tin~ of 25ns/35ns/45ns and maximum operating current (If 135/l20/120mA h'hen L5 goes'high, the device is deselected and placed in a ](l' po,'er standby mode in ,'hich maximum standhy current is 2OrnA. Thus the T~m2068AD is nost suitable for us in cache memory and high speed sto
TMM2068AD Datasheet (192.74 KB)
TMM2068AD
192.74 KB
Static ram.
TOSHIBA MOS MEMORY PRODUCT 4,096 WORD X 4 BIT STATIC RAM SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS PROCESS TMM2068AO-25, TMM2068AO-35 TMM2068AO-.
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