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Toshiba Electronic Components Datasheet

TMM27256ADI Datasheet

N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

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TMM27256ADI pdf
TOSHIBA MOS MEMORY PRODUCT
32,768 WORD X 8 BIT N·MOS UV ERASABLE AND
ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
SILICON STACKED GATE MOS
TMM27256ADI-15
TMM27256ADI-20
DESCRIPTION
The TMM27256ADI is a 32,768 word x 8 bit
ultraviolet light erasable and electrically program·
mabie read only memory.
For read operation, The TMM27256ADI's access
time is 150ns/200ns, and the TMM27256ADI oper-
ates from a single 5-volt power supply and has low
power standby mode which reduces the power dis-
sipation without increasing access time. The standby
mode is achieved by applying a TIL-high level signal
to the CE input.
For program operation, the programming is
achieved by using the high speed programming
mode.
The TMM27256ADI is fabricated with the N-chan-
nel silicon double layer gate MaS technology.
FEATURES
Vee
tAee
1eC2
lee 1
-15
150ns
I
5V±5%
I
100mA
30mA
'-
-20
200ns
• Wide operating temparature range -40-85°C
• Full static operation
• High speed programming mode
• Inputs and outputs TTL compatible
• Pin compatible with i27256
• Standard 28 pin DIP cerdip package
PIN CONNECTION (TOP VIEW)
Vee
AU
Al3
AS
A5 A9
A4 All
A3 DE
A2 AIO
BE
07
00 06
01 05
02 04
OND 03
BLOCK DIAGRAM
Vpp OND Vee
00 01 0203 O. 05 06 07
AO
Al
A2
~:!
A4
A5
A6
A7
AS
A9
AlO
All
A12
AI:!
Al4
PIN NAMES
MODE SELECTION
AO-'A14
00-07
CE
OE
Vpp
Vee
GND
Address Inputs
Outputs (Inputs)
Chip Enable Input
Output Enable Input
Program Supply Voltage
Vee Supply Voltage (+ 5V)
Ground
~MODE
CE
(20)
Read
L
Output
Deselect
*
Standby
H
Program
L
Program
Inhibit
H
Program
Verify
*
* .Note H or L
OE Vpp Vee
(22) (1) (28)
L
H 5V 5V
*
H
* 12.5V 6V
L
00-07
(11-13,15-19)
Data Out
High Impedance
High Impedance
Data In
High Impedance
Data Out
POWER
Active
Standby
Active
- 0-57 -


Toshiba Electronic Components Datasheet

TMM27256ADI Datasheet

N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

No Preview Available !

TMM27256ADI pdf
IMMlIZbIlAUI-l II
TMM27256ADI-20
MAXIMUM RATINGS
SYMBOL
Vee
VPP
VIN
Via
Po
TSOLOEA
TSTG
TaPA
ITEM
Vee Power Supply Voltage
Program Supply Voltage
Input Voltage
Input/Output Voltage
Power Dissipation
Soldering Temperature· Time
Storage Temperature
Operating Temperature
READ OPERATION
D. C. AND A.C. RECOMMENDED OPERATING CONDITIONS
SYMBOL
- - Ta
Vee
VPP
PARAMETER
Operating Temperature
Vee Power Supply Voltage
VPP Power Supply Voltage
D. C. AND OPERATING CHARACTERISTICS
SYMBOL
III
!La
IeCl
1eC2
VIH
VIL
VOH
VOL
IpPl
PARAMETER
Input Current
Output Leakage Current
Supply Current (Standby)
Supply Current (Active)
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
VPP Current
CONDITION
VIN=O-Vee
VouT=0.4-Vec
CE=VIH
CE=VIL
-
-
IOH= -400J-lA
IOL=2.1mA
Vpp=0-Vcc+0.6
RATING
-0.6-7.0
-0.6-14.0
-0.6-7.0
-0.6-7.0
1.5
260·10
-65-125
-40-85'C
UNIT
V
V
V
V
W
'C'sec
'C
'C
TMM27256ADI-15!20
-40-85'C
5V±5%
2.2-Vee±0.6V
MIN. TYP.
--
MAX.
±10
UNIT
J-lA
- - ±10 J-lA
--
--
35 mA
120 mA
2.2 - Vec+ 1.0 V
-0.3 -
0.8 V
2.4 - - V
--
--
0.4
±10
V
J-lA
A. C. CHARACTERISTICS
(Ta= -40-85'C, Vcc=5V±5%, Vpp=2 .0V-Vcc+0. 6V)
SYMBOL
PARAMETER
tACC Address Access Time
tCE CE to Output Valid
tOE OE to Output Valid
tOFl CE to Output in High-Z
tOF2 OE to Output in High-Z
tOH Output Data Hold Time
A C Test ConditIOns
• Output Load
• Input Pulse Rise and Fall Times
• Input Pulse Levels
• Timing Measurement Reference Level
TEST CONDITION
CE =OE=VIL
OE=VIL
CE=VIL
OE=VIL
CE=VIL
CE=OE=VIL
TMM27256AD-15 TMM27256AD-20
MIN.
-
-
-
MAX.
150
150
70
MIN.
-
-
-
MAX.
200
200
70
0 60 0 60
0 60 0 60
0-
0-
UNIT
ns
ns
ns
ns
ns
ns
1 TIL Gate and CL = 100pF
10ns Max.
0.45V to 2.4V
,Inputs 0.8V and 2.0V, Outputs 0.8V and 2.0V
- 0-58 -


Part Number TMM27256ADI
Description N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
Maker Toshiba
Total Page 8 Pages
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