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TMM41256P-12 - DRAM

General Description

The TMM41256P/T is the new generation dynamic RAM organized 262,144 words by 1 bit, it is successor to the industry standard TMM4164AP.

Key Features

  • include sing Ie power supply of 5V ± 10% tolerance, direct interfacing capability with high perforrna nce logic families such as Schottky TTL.

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Other Datasheets by Toshiba

Part Number Description
TMM41256P-15 DRAM
TMM41256AP-10 N-channel dynamic RAM
TMM41256AP-12 N-channel dynamic RAM
TMM41256AP-15 N-channel dynamic RAM
TMM41256AT-10 N-channel dynamic RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA MOS MEMORY PRODUCT 262,144 WORD X 1 BIT DYNAMIC RAM N-CHANNEL SILICON GATE MOS TMM41256P/T-12 TMM41256P/T-15 DESCRIPTION The TMM41256P/T is the new generation dynamic RAM organized 262,144 words by 1 bit, it is successor to the industry standard TMM4164AP. The TMM41256P/T utilizes TOSHI BA's N-channel Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TMM- 41256P IT to be packaged in a standard 16 pin plastic DIP and 18 pin plastic leaded chip carner.