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TOSHIBA Transistor Silicon NPN Epitaxial Type
TPC6504
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
TPC6504
Unit: mm
• High DC current gain
: hFE = 400 to 1000 (IC = 0.1 A)
• Low collector-emitter saturation voltage : VCE (sat) = 0.17 V (max)
• High-speed switching
: tf = 85 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (Note 1)
DC Pulse
Base current
Collector power dissipation
(Note 2)
DC t = 10 s
Junction temperature
Storage temperature range
VCBO VCEX VCEO VEBO
IC ICP IB
PC
Tj Tstg
100
V
80
V
50
V
7
V
1.0 A
2.0
0.1
A
0.8 W
1.
TPC6504 Datasheet
