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TPC8089H - Silicon N-Channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 3.6 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ. ) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPC8089-H SOP-8 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 1 2013-04-04 Rev.1.0 TPC8089-H 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rati.

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Datasheet Details

Part number TPC8089H
Manufacturer Toshiba
File Size 281.45 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPC8089H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8089-H 1. Applications • Switching Voltage Regulators • Motor Drivers • DC-DC Converters 2. Features (1) High-speed switching (2) Small gate charge: QSW = 3.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPC8089-H SOP-8 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 1 2013-04-04 Rev.1.0 TPC8089-H 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 7.