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TPCA8A08-H
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H)
TPCA8A08-H
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
• Built-in a schottky barrier diode Low forward voltage: VDSF = −0.6 V (max)
• High-speed switching • Small gate charge: QSW = 11 nC (typ.) • Low drain-source ON-resistance:
RDS (ON) = 3.8 mΩ (typ.) (VGS = 4.5 V) • High forward transfer admittance: |Yfs| = 105 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.0 ± 0.3 5.0 ± 0.2
0.95 ± 0.05
Unit: mm
1.27 0.4 ± 0.1
8
0.05 M A
5
0.15 ± 0.05
0.166 ± 0.05
4 0.595 1
A
5.0 ± 0.2
0.
TPCA8A08-H Datasheet
